IRFS4410TRLPBF Pricing (USD) [50732pcs Stock]
- 1 pcs$0.77457
- 800 pcs$0.77072
- Part Number:
- IRFS4410TRLPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 88A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFS4410TRLPBF electronic components. IRFS4410TRLPBF can be shipped within 24 hours after order. If you have any demands for IRFS4410TRLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS4410TRLPBF Product Attributes
Part Number :
IRFS4410TRLPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 88A D2PAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 58A, 10V
Vgs(th) (Max) @ Id :
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5150pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
200W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263AB)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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