AUIRFS8407 Pricing (USD) [26270pcs Stock]
- 1 pcs$1.44109
- 10 pcs$1.28596
- 100 pcs$1.00035
- 500 pcs$0.81002
- 1,000 pcs$0.68315
- Part Number:
- AUIRFS8407
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 40V 195A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies AUIRFS8407 electronic components. AUIRFS8407 can be shipped within 24 hours after order. If you have any demands for AUIRFS8407, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRFS8407 Product Attributes
Part Number :
AUIRFS8407
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 40V 195A D2PAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.8 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
225nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7330pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
230W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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