IRFR120NPBF Pricing (USD) [13775pcs Stock]
- 1 pcs$0.33618
- 10 pcs$0.29386
- 100 pcs$0.22670
- 500 pcs$0.16793
- 1,000 pcs$0.13434
- Part Number:
- IRFR120NPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 100V 9.4A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Thyristors - SCRs, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFR120NPBF electronic components. IRFR120NPBF can be shipped within 24 hours after order. If you have any demands for IRFR120NPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR120NPBF Product Attributes
Part Number :
IRFR120NPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 100V 9.4A DPAK
Series :
HEXFET®
Part Status :
Discontinued at Digi-Key
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
210 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
48W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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