TPN1110ENH,L1Q Pricing (USD) [151133pcs Stock]
- 1 pcs$0.25703
- 5,000 pcs$0.25575
- Part Number:
- TPN1110ENH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 200V 7.2A 8TSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Thyristors - TRIACs, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - IGBTs - Modules and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPN1110ENH,L1Q electronic components. TPN1110ENH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN1110ENH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN1110ENH,L1Q Product Attributes
Part Number :
TPN1110ENH,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 200V 7.2A 8TSON
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id :
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
700mW (Ta), 39W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-TSON Advance (3.3x3.3)
Package / Case :
8-PowerVDFN
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