AOT1N60 Pricing (USD) [150840pcs Stock]
- 1 pcs$0.26894
- 10 pcs$0.22623
- 100 pcs$0.16967
- 500 pcs$0.12442
- 1,000 pcs$0.09615
- Part Number:
- AOT1N60
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Detailed description:
- MOSFET N-CH 600V 1.3A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Alpha & Omega Semiconductor Inc. AOT1N60 electronic components. AOT1N60 can be shipped within 24 hours after order. If you have any demands for AOT1N60, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AOT1N60 Product Attributes
Part Number :
AOT1N60
Manufacturer :
Alpha & Omega Semiconductor Inc.
Description :
MOSFET N-CH 600V 1.3A TO-220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9 Ohm @ 650mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
160pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
41.7W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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