IXYS - IXFN100N25

KEY Part #: K6404435

IXFN100N25 Pricing (USD) [4014pcs Stock]

  • 1 pcs$10.79118

Part Number:
IXFN100N25
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 250V 100A SOT-227B.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Thyristors - SCRs, Diodes - Zener - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in IXYS IXFN100N25 electronic components. IXFN100N25 can be shipped within 24 hours after order. If you have any demands for IXFN100N25, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN100N25 Product Attributes

Part Number : IXFN100N25
Manufacturer : IXYS
Description : MOSFET N-CH 250V 100A SOT-227B
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 27 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 300nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 9100pF @ 25V
FET Feature : -
Power Dissipation (Max) : 600W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC