Infineon Technologies - IPB065N03LGATMA1

KEY Part #: K6416553

IPB065N03LGATMA1 Pricing (USD) [152979pcs Stock]

  • 1 pcs$0.24178

Part Number:
IPB065N03LGATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 30V 50A TO-263-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Infineon Technologies IPB065N03LGATMA1 electronic components. IPB065N03LGATMA1 can be shipped within 24 hours after order. If you have any demands for IPB065N03LGATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB065N03LGATMA1 Product Attributes

Part Number : IPB065N03LGATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 50A TO-263-3
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2400pF @ 15V
FET Feature : -
Power Dissipation (Max) : 56W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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