FDT439N Pricing (USD) [315576pcs Stock]
- 1 pcs$0.13092
- 4,000 pcs$0.13027
- Part Number:
- FDT439N
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 30V 6.3A SOT-223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDT439N electronic components. FDT439N can be shipped within 24 hours after order. If you have any demands for FDT439N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDT439N Product Attributes
Part Number :
FDT439N
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 30V 6.3A SOT-223
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
45 mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
500pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
3W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223-4
Package / Case :
TO-261-4, TO-261AA
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