SIZ328DT-T1-GE3 Pricing (USD) [229895pcs Stock]
- 1 pcs$0.16089
- Part Number:
- SIZ328DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET DUAL N-CHAN 25V POWERPAIR.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZ328DT-T1-GE3 electronic components. SIZ328DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ328DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ328DT-T1-GE3 Product Attributes
Part Number :
SIZ328DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DUAL N-CHAN 25V POWERPAIR
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs :
15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.9nC @ 10V, 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
325pF @ 10V, 600pF @ 10V
Power - Max :
2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerWDFN
Supplier Device Package :
8-Power33 (3x3)
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