FDT86113LZ Pricing (USD) [293170pcs Stock]
- 1 pcs$0.12680
- 4,000 pcs$0.12616
- Part Number:
- FDT86113LZ
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 3.3A SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Diodes - RF, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDT86113LZ electronic components. FDT86113LZ can be shipped within 24 hours after order. If you have any demands for FDT86113LZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDT86113LZ Product Attributes
Part Number :
FDT86113LZ
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 3.3A SOT223
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
315pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.2W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223-4
Package / Case :
TO-261-4, TO-261AA
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