Toshiba Semiconductor and Storage - TK160F10N1L,LQ

KEY Part #: K6418601

TK160F10N1L,LQ Pricing (USD) [69651pcs Stock]

  • 1 pcs$0.56138

Part Number:
TK160F10N1L,LQ
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK160F10N1L,LQ electronic components. TK160F10N1L,LQ can be shipped within 24 hours after order. If you have any demands for TK160F10N1L,LQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK160F10N1L,LQ Product Attributes

Part Number : TK160F10N1L,LQ
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-F POWER MOSFET TRANSISTOR
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10100pF @ 10V
FET Feature : -
Power Dissipation (Max) : 375W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM(W)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB