TK160F10N1L,LQ Pricing (USD) [69651pcs Stock]
- 1 pcs$0.56138
- Part Number:
- TK160F10N1L,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK160F10N1L,LQ electronic components. TK160F10N1L,LQ can be shipped within 24 hours after order. If you have any demands for TK160F10N1L,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK160F10N1L,LQ Product Attributes
Part Number :
TK160F10N1L,LQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
X35 PB-F POWER MOSFET TRANSISTOR
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.4 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
122nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10100pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
375W (Tc)
Operating Temperature :
175°C
Mounting Type :
Surface Mount
Supplier Device Package :
TO-220SM(W)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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