Vishay Semiconductor Diodes Division - RGF1BHE3/67A

KEY Part #: K6457444

RGF1BHE3/67A Pricing (USD) [506068pcs Stock]

  • 1 pcs$0.07309
  • 6,000 pcs$0.06624

Part Number:
RGF1BHE3/67A
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 100 Volt 150ns 30 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Transistors - Special Purpose, Power Driver Modules and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division RGF1BHE3/67A electronic components. RGF1BHE3/67A can be shipped within 24 hours after order. If you have any demands for RGF1BHE3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGF1BHE3/67A Product Attributes

Part Number : RGF1BHE3/67A
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A DO214BA
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 150ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 8.5pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214BA
Supplier Device Package : DO-214BA (GF1)
Operating Temperature - Junction : -65°C ~ 175°C

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