Vishay Semiconductor Diodes Division - MURS120HE3_A/I

KEY Part #: K6457379

MURS120HE3_A/I Pricing (USD) [477636pcs Stock]

  • 1 pcs$0.07744
  • 3,200 pcs$0.07081

Part Number:
MURS120HE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 2A DO214AA. Rectifiers 1A,200V,25ns SMB, UF Rect, SMD
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division MURS120HE3_A/I electronic components. MURS120HE3_A/I can be shipped within 24 hours after order. If you have any demands for MURS120HE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURS120HE3_A/I Product Attributes

Part Number : MURS120HE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 2A DO214AA
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 875mV @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Current - Reverse Leakage @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMB)
Operating Temperature - Junction : -65°C ~ 175°C

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