IXYS - IXTQ18N60P

KEY Part #: K6395070

IXTQ18N60P Pricing (USD) [27344pcs Stock]

  • 1 pcs$1.74194
  • 30 pcs$1.73327

Part Number:
IXTQ18N60P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 600V 18A TO-3P.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in IXYS IXTQ18N60P electronic components. IXTQ18N60P can be shipped within 24 hours after order. If you have any demands for IXTQ18N60P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTQ18N60P Product Attributes

Part Number : IXTQ18N60P
Manufacturer : IXYS
Description : MOSFET N-CH 600V 18A TO-3P
Series : PolarHV™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 420 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 49nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2500pF @ 25V
FET Feature : -
Power Dissipation (Max) : 360W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P
Package / Case : TO-3P-3, SC-65-3