TK6Q65W,S1Q Pricing (USD) [91009pcs Stock]
- 1 pcs$0.58952
- 75 pcs$0.47262
- 150 pcs$0.41353
- 525 pcs$0.30336
- 1,050 pcs$0.23950
- Part Number:
- TK6Q65W,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 650V 5.8A IPAK-OS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Power Driver Modules and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK6Q65W,S1Q electronic components. TK6Q65W,S1Q can be shipped within 24 hours after order. If you have any demands for TK6Q65W,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6Q65W,S1Q Product Attributes
Part Number :
TK6Q65W,S1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 5.8A IPAK-OS
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
390pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
60W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Stub Leads, IPak
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