Infineon Technologies - IRFR3910TRPBF

KEY Part #: K6407590

IRFR3910TRPBF Pricing (USD) [205934pcs Stock]

  • 1 pcs$0.17961
  • 2,000 pcs$0.15349

Part Number:
IRFR3910TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 16A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Infineon Technologies IRFR3910TRPBF electronic components. IRFR3910TRPBF can be shipped within 24 hours after order. If you have any demands for IRFR3910TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR3910TRPBF Product Attributes

Part Number : IRFR3910TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 16A DPAK
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 115 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 25V
FET Feature : -
Power Dissipation (Max) : 79W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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