Rohm Semiconductor - RD3H200SNFRATL

KEY Part #: K6393196

RD3H200SNFRATL Pricing (USD) [149978pcs Stock]

  • 1 pcs$0.24662

Part Number:
RD3H200SNFRATL
Manufacturer:
Rohm Semiconductor
Detailed description:
RD3H200SNFRA IS THE HIGH RELIABI.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Power Driver Modules, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Diodes - Zener - Single and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Rohm Semiconductor RD3H200SNFRATL electronic components. RD3H200SNFRATL can be shipped within 24 hours after order. If you have any demands for RD3H200SNFRATL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RD3H200SNFRATL Product Attributes

Part Number : RD3H200SNFRATL
Manufacturer : Rohm Semiconductor
Description : RD3H200SNFRA IS THE HIGH RELIABI
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 45V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 10V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63