Vishay Siliconix - SQM110P04-04L-GE3

KEY Part #: K6412787

[13325pcs Stock]


    Part Number:
    SQM110P04-04L-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET P-CH 40V 120A TO263.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Power Driver Modules, Thyristors - TRIACs and Transistors - Bipolar (BJT) - RF ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SQM110P04-04L-GE3 electronic components. SQM110P04-04L-GE3 can be shipped within 24 hours after order. If you have any demands for SQM110P04-04L-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SQM110P04-04L-GE3 Product Attributes

    Part Number : SQM110P04-04L-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET P-CH 40V 120A TO263
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 40V
    Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 4 mOhm @ 30A, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 330nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 13980pF @ 20V
    FET Feature : -
    Power Dissipation (Max) : 375W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : TO-263 (D2Pak)
    Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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