Diodes Incorporated - DMN3030LSS-13

KEY Part #: K6403364

DMN3030LSS-13 Pricing (USD) [15265pcs Stock]

  • 2,500 pcs$0.07080

Part Number:
DMN3030LSS-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 30V 9A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN3030LSS-13 electronic components. DMN3030LSS-13 can be shipped within 24 hours after order. If you have any demands for DMN3030LSS-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3030LSS-13 Product Attributes

Part Number : DMN3030LSS-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 30V 9A 8-SOIC
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 18 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 741pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP
Package / Case : 8-SOIC (0.154", 3.90mm Width)