TSM4ND65CI Pricing (USD) [82036pcs Stock]
- 1 pcs$0.47663
- Part Number:
- TSM4ND65CI
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- 650V 4A SINGLE N-CHANNEL POWER M.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction, Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM4ND65CI electronic components. TSM4ND65CI can be shipped within 24 hours after order. If you have any demands for TSM4ND65CI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM4ND65CI Product Attributes
Part Number :
TSM4ND65CI
Manufacturer :
Taiwan Semiconductor Corporation
Description :
650V 4A SINGLE N-CHANNEL POWER M
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.6 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id :
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16.8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
596pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
41.6W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ITO-220
Package / Case :
TO-220-3 Full Pack, Isolated Tab
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