SI1070X-T1-GE3 Pricing (USD) [498647pcs Stock]
- 1 pcs$0.07455
- 3,000 pcs$0.07418
- Part Number:
- SI1070X-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 30V 1.2A SOT563F.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI1070X-T1-GE3 electronic components. SI1070X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1070X-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1070X-T1-GE3 Product Attributes
Part Number :
SI1070X-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 30V 1.2A SOT563F
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
-
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id :
1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
385pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
236mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SC-89-6
Package / Case :
SOT-563, SOT-666
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