[2659pcs Stock]
- Part Number:
- NDDP010N25AZ-1H
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 250V 10A IPAK/TP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor NDDP010N25AZ-1H electronic components. NDDP010N25AZ-1H can be shipped within 24 hours after order. If you have any demands for NDDP010N25AZ-1H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NDDP010N25AZ-1H Product Attributes
Part Number :
NDDP010N25AZ-1H
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 250V 10A IPAK/TP
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
420 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
980pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta), 52W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
IPAK/TP
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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