Infineon Technologies - AUIRFL024NTR

KEY Part #: K6420189

AUIRFL024NTR Pricing (USD) [168782pcs Stock]

  • 1 pcs$0.21914
  • 2,500 pcs$0.20099

Part Number:
AUIRFL024NTR
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 55V 2.8A SOT-223.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Infineon Technologies AUIRFL024NTR electronic components. AUIRFL024NTR can be shipped within 24 hours after order. If you have any demands for AUIRFL024NTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
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AUIRFL024NTR Product Attributes

Part Number : AUIRFL024NTR
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 55V 2.8A SOT-223
Series : HEXFET®
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 75 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18.3nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA

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