Infineon Technologies - SPA20N65C3XKSA1

KEY Part #: K6417200

SPA20N65C3XKSA1 Pricing (USD) [26235pcs Stock]

  • 1 pcs$1.57089

Part Number:
SPA20N65C3XKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 650V 20.7A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - Programmable Unijunction, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Infineon Technologies SPA20N65C3XKSA1 electronic components. SPA20N65C3XKSA1 can be shipped within 24 hours after order. If you have any demands for SPA20N65C3XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPA20N65C3XKSA1 Product Attributes

Part Number : SPA20N65C3XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 20.7A TO-220
Series : CoolMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id : 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 114nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2400pF @ 25V
FET Feature : -
Power Dissipation (Max) : 34.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3
Package / Case : TO-220-3 Full Pack

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