Diodes Incorporated - DMPH4013SK3Q-13

KEY Part #: K6403282

DMPH4013SK3Q-13 Pricing (USD) [175074pcs Stock]

  • 1 pcs$0.21127

Part Number:
DMPH4013SK3Q-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET BVDSS 31V-40V TO252 TR.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Power Driver Modules, Diodes - RF and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Diodes Incorporated DMPH4013SK3Q-13 electronic components. DMPH4013SK3Q-13 can be shipped within 24 hours after order. If you have any demands for DMPH4013SK3Q-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMPH4013SK3Q-13 Product Attributes

Part Number : DMPH4013SK3Q-13
Manufacturer : Diodes Incorporated
Description : MOSFET BVDSS 31V-40V TO252 TR
Series : Automotive, AEC-Q101
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 15 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4004pF @ 20V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63