Toshiba Semiconductor and Storage - SSM3J35AMFV,L3F

KEY Part #: K6421709

SSM3J35AMFV,L3F Pricing (USD) [2597817pcs Stock]

  • 1 pcs$0.01424

Part Number:
SSM3J35AMFV,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
X34 SMALL LOW ON RESISTANCE PCH.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - JFETs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM3J35AMFV,L3F electronic components. SSM3J35AMFV,L3F can be shipped within 24 hours after order. If you have any demands for SSM3J35AMFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3J35AMFV,L3F Product Attributes

Part Number : SSM3J35AMFV,L3F
Manufacturer : Toshiba Semiconductor and Storage
Description : X34 SMALL LOW ON RESISTANCE PCH
Series : U-MOSVII
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V
Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 42pF @ 10V
FET Feature : -
Power Dissipation (Max) : 150mW (Ta)
Operating Temperature : 150°C
Mounting Type : Surface Mount
Supplier Device Package : VESM
Package / Case : SOT-723

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