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  5. FDT86106LZ

ON Semiconductor - FDT86106LZ

KEY Part #: K6407449

FDT86106LZ Pricing (USD) [178611pcs Stock]

  • 1 pcs$0.20812
  • 4,000 pcs$0.20708
Part Number:
FDT86106LZ
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 100V 3.2A SOT-223-4.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - SCRs - Modules, Diodes - Zener - Single, Thyristors - SCRs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor FDT86106LZ electronic components. FDT86106LZ can be shipped within 24 hours after order. If you have any demands for FDT86106LZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDT86106LZ Product Attributes

Part Number : FDT86106LZ
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 100V 3.2A SOT-223-4
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 108 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 315pF @ 50V
FET Feature : -
Power Dissipation (Max) : 2.2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223-4
Package / Case : TO-261-4, TO-261AA

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