SI8469DB-T2-E1 Pricing (USD) [3004pcs Stock]
- 3,000 pcs$0.07418
- Part Number:
- SI8469DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 8V 3.6A MICRO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI8469DB-T2-E1 electronic components. SI8469DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8469DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8469DB-T2-E1 Product Attributes
Part Number :
SI8469DB-T2-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 8V 3.6A MICRO
Series :
TrenchFET®
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
8V
Current - Continuous Drain (Id) @ 25°C :
4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
64 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 4.5V
Vgs (Max) :
±5V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 4V
FET Feature :
-
Power Dissipation (Max) :
780mW (Ta), 1.8W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
4-Microfoot
Package / Case :
4-UFBGA
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