Infineon Technologies - IPD60R650CEBTMA1

KEY Part #: K6402170

IPD60R650CEBTMA1 Pricing (USD) [2797pcs Stock]

  • 2,500 pcs$0.13752

Part Number:
IPD60R650CEBTMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 600V 7A TO252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Thyristors - TRIACs and Transistors - IGBTs - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60R650CEBTMA1 Product Attributes

Part Number : IPD60R650CEBTMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 600V 7A TO252
Series : CoolMOS™ CE
Part Status : Discontinued at Digi-Key
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 650 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 20.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 100V
FET Feature : -
Power Dissipation (Max) : 82W (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO252-3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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