IXYS - IXFX32N80Q3

KEY Part #: K6398001

IXFX32N80Q3 Pricing (USD) [4329pcs Stock]

  • 1 pcs$11.50837
  • 10 pcs$10.64524
  • 100 pcs$9.09161

Part Number:
IXFX32N80Q3
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 800V 32A PLUS247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Thyristors - SCRs - Modules and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in IXYS IXFX32N80Q3 electronic components. IXFX32N80Q3 can be shipped within 24 hours after order. If you have any demands for IXFX32N80Q3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX32N80Q3 Product Attributes

Part Number : IXFX32N80Q3
Manufacturer : IXYS
Description : MOSFET N-CH 800V 32A PLUS247
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 270 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 140nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 6940pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1000W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PLUS247™-3
Package / Case : TO-247-3

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