ZXMN3B04N8TA Pricing (USD) [123754pcs Stock]
- 1 pcs$0.29888
- 500 pcs$0.27278
- Part Number:
- ZXMN3B04N8TA
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 30V 8.9A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXMN3B04N8TA electronic components. ZXMN3B04N8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3B04N8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN3B04N8TA Product Attributes
Part Number :
ZXMN3B04N8TA
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 30V 8.9A 8-SOIC
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id :
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
23.1nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
2480pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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