Vishay Siliconix - SIS698DN-T1-GE3

KEY Part #: K6420921

SIS698DN-T1-GE3 Pricing (USD) [293170pcs Stock]

  • 1 pcs$0.12616

Part Number:
SIS698DN-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 100V 6.9A 1212-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Diodes - Zener - Arrays, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIS698DN-T1-GE3 Product Attributes

Part Number : SIS698DN-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 100V 6.9A 1212-8
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 195 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 50V
FET Feature : -
Power Dissipation (Max) : 19.8W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 1212-8
Package / Case : PowerPAK® 1212-8