IXTH110N10L2 Pricing (USD) [6911pcs Stock]
- 1 pcs$6.55762
- 10 pcs$5.96267
- 100 pcs$5.06827
- 500 pcs$4.32294
- Part Number:
- IXTH110N10L2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 100V 110A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXTH110N10L2 electronic components. IXTH110N10L2 can be shipped within 24 hours after order. If you have any demands for IXTH110N10L2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH110N10L2 Product Attributes
Part Number :
IXTH110N10L2
Manufacturer :
IXYS
Description :
MOSFET N-CH 100V 110A TO-247
Series :
Linear L2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10500pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
600W (Tc)
Operating Temperature :
-
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Package / Case :
TO-247-3
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