IPA80R1K4CEXKSA2 Pricing (USD) [57728pcs Stock]
- 1 pcs$0.61879
- 10 pcs$0.54980
- 100 pcs$0.43461
- 500 pcs$0.31882
- 1,000 pcs$0.25170
- Part Number:
- IPA80R1K4CEXKSA2
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET NCH 800V 3.9A TO220-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPA80R1K4CEXKSA2 electronic components. IPA80R1K4CEXKSA2 can be shipped within 24 hours after order. If you have any demands for IPA80R1K4CEXKSA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA80R1K4CEXKSA2 Product Attributes
Part Number :
IPA80R1K4CEXKSA2
Manufacturer :
Infineon Technologies
Description :
MOSFET NCH 800V 3.9A TO220-3
Series :
CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
570pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
31W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220 Full Pack
Package / Case :
TO-220-3 Full Pack
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