IXTN550N055T2 Pricing (USD) [2945pcs Stock]
- 1 pcs$16.17380
- 10 pcs$14.96227
- 100 pcs$12.77879
- Part Number:
- IXTN550N055T2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 55V 550A SOT-227.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in IXYS IXTN550N055T2 electronic components. IXTN550N055T2 can be shipped within 24 hours after order. If you have any demands for IXTN550N055T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN550N055T2 Product Attributes
Part Number :
IXTN550N055T2
Manufacturer :
IXYS
Description :
MOSFET N-CH 55V 550A SOT-227
Series :
GigaMOS™, TrenchT2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
550A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
595nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
40000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
940W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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