Vishay Siliconix - SI5435BDC-T1-E3

KEY Part #: K6403990

[2166pcs Stock]


    Part Number:
    SI5435BDC-T1-E3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET P-CH 30V 4.3A 1206-8.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Thyristors - SCRs and Transistors - JFETs ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI5435BDC-T1-E3 electronic components. SI5435BDC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5435BDC-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5435BDC-T1-E3 Product Attributes

    Part Number : SI5435BDC-T1-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET P-CH 30V 4.3A 1206-8
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 4.3A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 45 mOhm @ 4.3A, 10V
    Vgs(th) (Max) @ Id : 3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : -
    FET Feature : -
    Power Dissipation (Max) : 1.3W (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 1206-8 ChipFET™
    Package / Case : 8-SMD, Flat Lead

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