STD12N60M2 Pricing (USD) [125212pcs Stock]
- 1 pcs$0.29688
- 2,500 pcs$0.29540
- Part Number:
- STD12N60M2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CHANNEL 600V 9A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STD12N60M2 electronic components. STD12N60M2 can be shipped within 24 hours after order. If you have any demands for STD12N60M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD12N60M2 Product Attributes
Part Number :
STD12N60M2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CHANNEL 600V 9A DPAK
Series :
MDmesh™ M2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
538pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
85W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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