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  5. FQB11P06TM

ON Semiconductor - FQB11P06TM

KEY Part #: K6402943

FQB11P06TM Pricing (USD) [147217pcs Stock]

  • 1 pcs$0.25125
  • 800 pcs$0.25038
Part Number:
FQB11P06TM
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 60V 11.4A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Diodes - Zener - Single, Thyristors - SCRs, Transistors - JFETs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FQB11P06TM electronic components. FQB11P06TM can be shipped within 24 hours after order. If you have any demands for FQB11P06TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQB11P06TM Product Attributes

Part Number : FQB11P06TM
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 60V 11.4A D2PAK
Series : QFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 175 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 550pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.13W (Ta), 53W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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