IXTH30N60P Pricing (USD) [12845pcs Stock]
- 1 pcs$3.68866
- 10 pcs$3.31847
- 100 pcs$2.72837
- 500 pcs$2.28595
- 1,000 pcs$1.99099
- Part Number:
- IXTH30N60P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 30A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXTH30N60P electronic components. IXTH30N60P can be shipped within 24 hours after order. If you have any demands for IXTH30N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH30N60P Product Attributes
Part Number :
IXTH30N60P
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 30A TO-247
Series :
PolarHV™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
240 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
5050pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
540W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Package / Case :
TO-247-3
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