Vishay Semiconductor Diodes Division - SE30AFBHM3/6B

KEY Part #: K6457980

SE30AFBHM3/6B Pricing (USD) [788477pcs Stock]

  • 1 pcs$0.04950
  • 14,000 pcs$0.04926

Part Number:
SE30AFBHM3/6B
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1.4A DO221AC. Rectifiers 3 Amp 100 volts ESD PROTECTION 13in
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division SE30AFBHM3/6B electronic components. SE30AFBHM3/6B can be shipped within 24 hours after order. If you have any demands for SE30AFBHM3/6B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE30AFBHM3/6B Product Attributes

Part Number : SE30AFBHM3/6B
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1.4A DO221AC
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1.4A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 3A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.5µs
Current - Reverse Leakage @ Vr : 100µA @ 100V
Capacitance @ Vr, F : 19pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-221AC, SMA Flat Leads
Supplier Device Package : DO-221AC
Operating Temperature - Junction : -55°C ~ 175°C

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