Infineon Technologies - IRF6201TRPBF

KEY Part #: K6420261

IRF6201TRPBF Pricing (USD) [175797pcs Stock]

  • 1 pcs$0.21040
  • 4,000 pcs$0.16451

Part Number:
IRF6201TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 20V 27A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Infineon Technologies IRF6201TRPBF electronic components. IRF6201TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6201TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF6201TRPBF Product Attributes

Part Number : IRF6201TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 20V 27A 8-SOIC
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 2.45 mOhm @ 27A, 4.5V
Vgs(th) (Max) @ Id : 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 8555pF @ 16V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)

You May Also Be Interested In