FCP650N80Z Pricing (USD) [29043pcs Stock]
- 1 pcs$1.58211
- 10 pcs$1.41068
- 100 pcs$1.09743
- 500 pcs$0.88865
- 1,000 pcs$0.74947
- Part Number:
- FCP650N80Z
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 800V 10A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Zener - Single, Transistors - JFETs, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCP650N80Z electronic components. FCP650N80Z can be shipped within 24 hours after order. If you have any demands for FCP650N80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP650N80Z Product Attributes
Part Number :
FCP650N80Z
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 10A
Series :
SuperFET® II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1565pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
162W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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