Vishay Siliconix - SI4324DY-T1-GE3

KEY Part #: K6406141

[1422pcs Stock]


    Part Number:
    SI4324DY-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N-CH 30V 36A 8-SOIC.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Power Driver Modules ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI4324DY-T1-GE3 electronic components. SI4324DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4324DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4324DY-T1-GE3 Product Attributes

    Part Number : SI4324DY-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N-CH 30V 36A 8-SOIC
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 20A, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 85nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 3510pF @ 15V
    FET Feature : -
    Power Dissipation (Max) : 3.5W (Ta), 7.8W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-SO
    Package / Case : 8-SOIC (0.154", 3.90mm Width)

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