[2645pcs Stock]
- Part Number:
- GP1M010A080H
- Manufacturer:
- Global Power Technologies Group
- Detailed description:
- MOSFET N-CH 800V 9.5A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Global Power Technologies Group GP1M010A080H electronic components. GP1M010A080H can be shipped within 24 hours after order. If you have any demands for GP1M010A080H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M010A080H Product Attributes
Part Number :
GP1M010A080H
Manufacturer :
Global Power Technologies Group
Description :
MOSFET N-CH 800V 9.5A TO220
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 4.75A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2336pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
290W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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