Infineon Technologies - BSC150N03LDGATMA1

KEY Part #: K6524970

BSC150N03LDGATMA1 Pricing (USD) [225640pcs Stock]

  • 1 pcs$0.16392

Part Number:
BSC150N03LDGATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET 2N-CH 30V 8A 8TDSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Infineon Technologies BSC150N03LDGATMA1 electronic components. BSC150N03LDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC150N03LDGATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC150N03LDGATMA1 Product Attributes

Part Number : BSC150N03LDGATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 30V 8A 8TDSON
Series : OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 15 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1100pF @ 15V
Power - Max : 26W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PG-TDSON-8 Dual

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