IXYS - IXTP01N100D

KEY Part #: K6400048

IXTP01N100D Pricing (USD) [20874pcs Stock]

  • 1 pcs$2.17265
  • 10 pcs$1.93908
  • 100 pcs$1.59005
  • 500 pcs$1.28755
  • 1,000 pcs$1.03020

Part Number:
IXTP01N100D
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1KV .1A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Power Driver Modules and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in IXYS IXTP01N100D electronic components. IXTP01N100D can be shipped within 24 hours after order. If you have any demands for IXTP01N100D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTP01N100D Product Attributes

Part Number : IXTP01N100D
Manufacturer : IXYS
Description : MOSFET N-CH 1KV .1A TO-220AB
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 110 Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 120pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 1.1W (Ta), 25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3