ON Semiconductor - NVMFS5C682NLAFT3G

KEY Part #: K6421331

NVMFS5C682NLAFT3G Pricing (USD) [459158pcs Stock]

  • 1 pcs$0.08860
  • 5,000 pcs$0.08816

Part Number:
NVMFS5C682NLAFT3G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 60V 8.8A 25A 5DFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in ON Semiconductor NVMFS5C682NLAFT3G electronic components. NVMFS5C682NLAFT3G can be shipped within 24 hours after order. If you have any demands for NVMFS5C682NLAFT3G, Please submit a Request for Quotation here or send us an email:
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ISO-28000-2007
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NVMFS5C682NLAFT3G Product Attributes

Part Number : NVMFS5C682NLAFT3G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 60V 8.8A 25A 5DFN
Series : Automotive, AEC-Q101
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8.8A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 21 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs : 5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 410pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.5W (Ta), 28W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN, 5 Leads

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