Infineon Technologies - IRFH8303TRPBF

KEY Part #: K6419203

IRFH8303TRPBF Pricing (USD) [96888pcs Stock]

  • 1 pcs$0.42456
  • 4,000 pcs$0.42245

Part Number:
IRFH8303TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 30V 100A PQFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF and Diodes - Zener - Single ...
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IRFH8303TRPBF Product Attributes

Part Number : IRFH8303TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 100A PQFN
Series : HEXFET®, StrongIRFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 43A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.1 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 179nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7736pF @ 24V
FET Feature : -
Power Dissipation (Max) : 3.7W (Ta), 156W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-PQFN (5x6)
Package / Case : 8-PowerTDFN