HAT2169H-EL-E Pricing (USD) [60727pcs Stock]
- 1 pcs$0.67621
- 2,500 pcs$0.67285
- Part Number:
- HAT2169H-EL-E
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 40V 50A LFPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Renesas Electronics America HAT2169H-EL-E electronic components. HAT2169H-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2169H-EL-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HAT2169H-EL-E Product Attributes
Part Number :
HAT2169H-EL-E
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 40V 50A LFPAK
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6650pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
30W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
LFPAK
Package / Case :
SC-100, SOT-669
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