N0603N-S23-AY Pricing (USD) [106032pcs Stock]
- 1 pcs$0.42223
- 1,000 pcs$0.42013
- Part Number:
- N0603N-S23-AY
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 60V 100A TO-262.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Thyristors - SCRs and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Renesas Electronics America N0603N-S23-AY electronic components. N0603N-S23-AY can be shipped within 24 hours after order. If you have any demands for N0603N-S23-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
N0603N-S23-AY Product Attributes
Part Number :
N0603N-S23-AY
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 60V 100A TO-262
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.6 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
133nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7730pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.5W (Ta), 156W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-262
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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